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| savantic semiconductor product specification silicon npn power transistors BUH417D d escription with to-3pml package high voltage high speed switching built-in damper diode applications switching power supply for tvs and monitors pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 7 a i cm collector current -peak t p <5ms 12 a i b base current (dc) 4 a i bm base current -peak t p <5ms 7 a p tot total power dissipation t c =25 55 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pml) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BUH417D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 700 v v cesat collector-emitter saturation voltage i c =4a ; i b =1a 1.5 v v besat base-emitter saturation voltage i c =4a ; i b =1a 1.3 v i ces collector cut-off current v ce =1700v ; v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 200 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 36 h fe-2 dc current gain i c =4a ; v ce =5v 6 v f diode forward voltage i f =4a 2 v thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.27 /w downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BUH417D package outline fig.2 outline dimensions downloaded from: http:/// |
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